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IRF3717 N-Channel MOSFET with 20V drain-source voltage and 20A continuous drain current. Features low on-resistance of 4.4mOhm max at 10V gate drive.
Mfr Part #:

IRF3717

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 20V drain-source voltage and 20A continuous drain current. Features low on-resistance of 4.4mOhm max at 10V gate drive.
✓ Total Stock: 180 pcs
$ Price Range: $1.41

IRF3717 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Hybrid Electronics ✓
Non-Authorised Inventory information
180 pcs
On Request
180 pcs On Request 1 On Request On Request 25 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRF3717 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
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IRF3717 Description

Short technical summary and product information.

The IRF3717 is an N-Channel power MOSFET from Infineon Technologies designed for low-voltage applications. It features a maximum drain-to-source voltage of 20V and continuous drain current of 20A at 25°C ambient temperature. The device offers a low typical on-resistance of 3.7mOhm (4.4mOhm maximum) at VGS=10V, enabling high efficiency in power conversion circuits.

 

This MOSFET is characterized for synchronous rectification in notebook processor power supplies and isolated DC-DC converters. It provides fast switching with typical turn-on delay of 12ns and rise time of 14ns. The gate charge is 22nC typical (33nC maximum) at VGS=4.5V, allowing efficient gate drive.

 

The device is housed in a standard SO-8 package (8-SOIC, 3.90mm width) with surface mount gull wing leads. It operates over a junction temperature range of -55°C to 150°C. The maximum power dissipation is 2.5W at 25°C ambient, derated to 1.6W at 70°C.

IRF3717 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: IRF3717 N-Channel MOSFET
Subcategory: Single MOSFET

IRF3717 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IRF3717 Estimated Pricing

Qty Low High
285+ $1.41 $1.41

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF3717 Features

  • Ultra-low on-resistance of 4.4mOhm maximum.
  • 20V drain-to-source voltage rating.
  • 20A continuous drain current capability.
  • Fast switching with 12ns turn-on delay.
  • Surface mount SO-8 package.

IRF3717 Applications

  • Synchronous MOSFET for notebook processor power.
  • Synchronous rectifier for isolated DC-DC converters.
  • Low-voltage power management circuits.
  • Battery-powered device load switching.

IRF3717 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating?

20V maximum.

What is the continuous drain current?

20A at 25°C ambient, 16A at 70°C.

What is the on-resistance?

3.7mOhm typical, 4.4mOhm maximum at VGS=10V, ID=20A.

What package is it available in?

8-SOIC (0.154", 3.90mm Width) surface mount.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is it RoHS compliant?

RoHS3 Compliant (unverified).

What is the gate threshold voltage?

1.55V minimum, 2.0V typical, 2.45V maximum at ID=250µA.

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