| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,020 pcs
|
9020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF3710ZSTRLPBF is an N-Channel Power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. It features a drain-source breakdown voltage of 100V and a continuous drain current of 59A at 25°C case temperature. The device achieves a maximum on-resistance of 18mOhm at 35A with a 10V gate drive, with a typical value of 14mOhm. The gate threshold voltage ranges from 2V to 4V at 250µA. Total gate charge is 120nC maximum at 10V, and input capacitance is 2900pF at 25V drain-source. The part is capable of single pulse avalanche energy up to 200mJ tested. Maximum power dissipation is 160W at 25°C case temperature, with a junction-to-case thermal resistance of 0.92°C/W. It operates over a junction temperature range of -55°C to 175°C. The device is offered in a surface mount TO-263-3 (D2PAK) package, suitable for automated PCB assembly. Common applications include DC-DC converters, motor drives, and power management systems where high current and low on-resistance are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.70 | $2.70 |
| 10+ | $1.74 | $1.74 |
| 50+ | $1.32 | $1.32 |
| 100+ | $1.19 | $1.19 |
| 800+ | $0.94 | $0.94 |
| 1,600+ | $0.89 | $0.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V maximum.
TO-263-3 (D2PAK) surface mount package.
-55°C to 175°C junction temperature.
Listed as RoHS3 compliant (unverified).
18mOhm at 35A, 10V gate drive.
120nC maximum at 10V gate-source voltage.
59A at case temperature 25°C, 42A at 100°C.