| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRF3710ZSPBF is an N-Channel HEXFET Power MOSFET designed for high-efficiency power conversion. It offers a drain-source breakdown voltage of 100V and continuous drain current capability of 59A at case temperature 25°C. The typical on-resistance is only 18mΩ when driven with 10V gate voltage, minimizing conduction losses. Gate charge is 120nC at 10V, enabling fast switching transitions. The device can operate over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 160W at 25°C. Thermal resistance from junction to case is 0.92°C/W, supporting effective heat management. The part is housed in a surface-mount D2PAK (TO-263-3) package with gull wing leads, suitable for automated assembly. It is ideal for applications such as DC-DC converters, motor drives, and switched-mode power supplies where efficiency and reliability are critical.
100V.
The device is available in a surface-mount TO-263-3 (D2PAK) package.
-55°C to 175°C (junction temperature).
Yes, it is RoHS3 compliant.
59A.
18mΩ at 35A, 10V.
160W at 25°C case temperature.