| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF3710ZPBF is an N-Channel power MOSFET manufactured by Infineon Technologies. It features a drain-to-source voltage (Vdss) of 100V and a continuous drain current of 59A at 25°C (42A at 100°C). The device offers a maximum on-resistance of 18mOhm at 10V gate drive, with a typical value of 14mOhm. It is designed for fast switching applications with a total gate charge of 120nC maximum and input capacitance of 2900pF. The MOSFET can handle pulsed drain currents up to 240A and has a single pulse avalanche energy rating of 170mJ (tested 200mJ). The device is housed in a TO-220-3 through-hole package (TO-220AB) and supports a junction temperature range of -55°C to 175°C. It is lead-free and RoHS compliant (unverified). This MOSFET is suitable for a variety of power conversion and switching applications where high efficiency and reliability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.85 | $2.85 |
| 10+ | $1.84 | $1.84 |
| 50+ | $1.41 | $1.41 |
| 100+ | $1.26 | $1.26 |
| 500+ | $1.02 | $1.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
59A at 25°C, 42A at 100°C.
18mOhm maximum at 10V gate drive.
TO-220-3 (TO-220AB) through-hole package.
-55°C to 175°C junction temperature.
RoHS3 compliant (unverified).
2V minimum to 4V maximum at 250µA drain current.