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690 pcs
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690 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This N-Channel power MOSFET, part number IRF3710STRRPBF from Infineon Technologies, is a surface-mount device designed for high-efficiency power switching. It has a drain-to-source voltage rating of 100 V and can conduct a continuous drain current of 57 A at 25°C case temperature, or 40 A at 100°C. Pulsed drain current capability is 180 A. Maximum power dissipation is 200 W at 25°C.
The device features a low on-resistance of 23 mOhm maximum at Vgs = 10 V and Id = 28 A, making it suitable for high-current applications with low conduction losses. Total gate charge is 130 nC at Vgs = 10 V, and input capacitance is 3130 pF at Vds = 25 V. The operating junction temperature range is -55°C to +175°C.
The MOSFET uses advanced HEXFET technology and is fully avalanche rated, with an avalanche current of 28 A and repetitive avalanche energy of 20 mJ. Peak diode recovery dv/dt is 5.8 V/ns. Junction-to-case thermal resistance is 0.75 °C/W and junction-to-ambient thermal resistance is 40 °C/W on a typical PCB mounting.
The device is packaged in a TO-263-3 / D2Pak (2 Leads + Tab) surface-mount package, also known as D2PAK. It is lead-free and listed as RoHS3 compliant, with MSL 1 unlimited moisture sensitivity.
Drain-to-source voltage is 100V, gate-to-source voltage is ±20V, and recommended drive voltage is 10V.
It is available in a TO-263-3 (D2Pak) surface-mount package, also known as D2PAK.
The operating junction temperature range is -55°C to +175°C.
The part is listed as RoHS3 compliant and lead-free.
Continuous drain current is 57A at Tc=25°C and 40A at Tc=100°C.
Maximum RDS(on) is 23mOhm at Vgs=10V and Id=28A.
Yes, it is fully avalanche rated with 28A avalanche current and 20mJ repetitive avalanche energy.