SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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12,000 pcs
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12000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale IRF3710PBF is an N-channel HEXFET Power MOSFET utilizing advanced processing techniques for extremely low on-resistance per silicon area. This device offers a Drain-to-Source Breakdown Voltage of 100V and a continuous drain current of 57A at 25°C case temperature.
Key electrical characteristics include a typical on-resistance of 23mΩ at 57A and 10V gate-source voltage. The MOSFET is rated for a continuous drain current of 40A at 100°C case temperature and a pulsed drain current of up to 180A. It operates within a junction temperature range of -55°C to +175°C.
The device is housed in a TO-220AB package, which is widely preferred for commercial-industrial applications due to its low thermal resistance and cost-effectiveness. The thermal resistance from junction-to-case is 0.75°C/W, and junction-to-ambient is 62°C/W.
This MOSFET is fully avalanche rated and features fast switching speeds, making it suitable for a variety of power management applications. It also includes a lead-free designation.
| Qty | Low | High |
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| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 57A at 25°C case temperature and 40A at 100°C case temperature.
The typical on-resistance is 23mΩ when the drain current is 57A and the gate-source voltage is 10V.
The package type is TO-220AB.
The operating junction and storage temperature range is -55°C to +175°C.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
