| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | 704 | On Request | On Request |
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| Vgs(th) (Max) @ Id |
IRF3709ZPBF is an N-Channel enhancement mode power MOSFET from Infineon Technologies. It features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 87A at 25°C case temperature. The device offers low on-resistance of 6.3 mOhm maximum at 10V gate drive, and 7.8 mOhm at 4.5V, making it suitable for high-efficiency power switching applications.
The MOSFET has a total gate charge of 26 nC maximum at 4.5V, enabling fast switching. Input capacitance is 2130 pF at 15V Vds. It supports a gate-source voltage of ±20V. The device is capable of operating over a junction temperature range of -55°C to 175°C.
Packaged in the industry-standard TO-220-3 through-hole package (TO-220AB), the IRF3709ZPBF is lead-free and RoHS compliant as per database records (unverified). Typical applications include synchronous buck converters and DC-DC converters for computer processor power.
The drain-source breakdown voltage (Vdss) is 30V.
It is available in a TO-220-3 through-hole package, also known as TO-220AB.
The operating junction temperature range is -55°C to 175°C.
The database indicates RoHS3 compliance, but this has not been verified through documentation.
The gate threshold voltage (Vgs(th)) ranges from 1.35V (minimum) to 2.25V (maximum) at Id=250µA.
Maximum power dissipation is 79W at case temperature 25°C.
The datasheet states the component is lead-free, with medium confidence as the claim is not independently verified.