IRF3709STRLPBF Infineon IRF3709STRLPBF is an N-Channel Power MOSFET rated for 30V drain-source voltage and 90A continuous drain current. It features a low on-resistance of 9mΩ (max) at 10V gate drive.
Mfr Part #:

IRF3709STRLPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IRF3709STRLPBF is an N-Channel Power MOSFET rated for 30V drain-source voltage and 90A continuous drain current. It features a low on-resistance of 9mΩ (max) at 10V gate drive.
✓ Total Stock: 2,400 pcs

IRF3709STRLPBF Available from 1 distributor

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2,400 pcs
2400 pcs On Request 1 On Request On Request 1937+ On Request On Request

IRF3709STRLPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF3709STRLPBF Description

Short technical summary and product information.

The Infineon IRF3709STRLPBF is a HEXFET Power MOSFET designed for high-efficiency power conversion applications. This N-Channel device is rated for a maximum drain-source voltage of 30V and a continuous drain current of 90A at 25°C case temperature. With a typical drain-source on-resistance of 7.9mΩ and maximum 10mΩ at Vgs=10V, it offers low conduction losses suitable for synchronous rectification and buck converters.

 

This MOSFET is optimized for synchronous buck converters and includes capacitive induced turn-on immunity. It features a total gate charge of 41nC at Vgs=5V, enabling fast switching performance. The device is housed in a D2PAK (TO-263) surface mount package, which provides excellent thermal performance with a junction-to-case thermal resistance of 1.04°C/W.

 

Typical applications include high-frequency isolated DC-DC converters for telecom and industrial use, as well as high-frequency buck converters for server processor power. The MOSFET is lead-free and RoHS compliant, with an operating temperature range of -55°C to 150°C.

IRF3709STRLPBF Quick Information

Product Type: Power MOSFET
Series: HEXFET
Canonical Name: Infineon IRF3709STRLPBF N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IRF3709STRLPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRF3709STRLPBF Features

  • Low on-resistance of 9mΩ (max) at 10V gate drive.
  • High continuous drain current rating of 90A.
  • Optimized for synchronous buck converter applications.
  • Surface mount D2PAK package for efficient thermal management.
  • Lead-free and RoHS compliant.

IRF3709STRLPBF Applications

  • Ideal for high-frequency isolated DC-DC converters.
  • Used in synchronous rectification for telecom power supplies.
  • Suitable for high-current buck converters in server processors.

IRF3709STRLPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF3709STRLPBF?

30V.

What package does the IRF3709STRLPBF come in?

D2PAK (TO-263-3) surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the IRF3709STRLPBF RoHS compliant?

Yes, it is RoHS3 compliant (unverified).

What is the maximum continuous drain current?

90A at Tc=25°C.

What is the typical gate threshold voltage?

3V max at Id=250µA.

What is the maximum power dissipation?

120W at Tc=25°C.

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