| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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205 pcs
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205 pcs | On Request | 1 | On Request | On Request | 1021 | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
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The IRF3709PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power conversion applications.
This device has a drain-to-source voltage rating of 30V and a maximum continuous drain current of 90A at 25°C case temperature. The typical on-resistance is 9mOhm at a 10V gate drive, enabling low conduction losses. It also features a low gate charge of 41nC for efficient switching.
The IRF3709PBF is offered in a through-hole TO-220AB package, suitable for a wide range of power supply and motor control circuits. It is lead-free and RoHS compliant.
The maximum drain-to-source voltage (Vdss) is 30V.
The maximum continuous drain current is 90A at a case temperature of 25°C.
The typical drain-to-source on-resistance (Rds(on)) is 9mOhm at a drain current of 15A and a gate-to-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.
The IRF3709PBF is available in a through-hole TO-220-3 (TO-220AB) package.
The datasheet indicates the device is lead-free, and the existing data lists it as RoHS3 compliant.
The maximum power dissipation is 120W at a case temperature of 25°C.