| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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403 pcs
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403 pcs | On Request | 1 | On Request | On Request | 814 | On Request | On Request |
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The IRF3707ZPBF is a 30V N-Channel HEXFET power MOSFET designed for high-efficiency power conversion. It features a maximum drain-source voltage of 30V and continuous drain current of 59A at Tc=25°C (42A at 100°C). The device achieves a maximum on-resistance of 9.5mΩ at Vgs=10V (typical 7.5mΩ) and 12.5mΩ at Vgs=4.5V (typical 10mΩ). Gate threshold voltage ranges from 1.35V (minimum) to 2.25V (maximum), with a typical value of 1.80V at Id=25µA.
The MOSFET offers low gate charge (typical 9.7nC at Vgs=4.5V) and fast switching with typical turn-on delay of 9.8ns, rise time 41ns, turn-off delay 12ns, and fall time 3.6ns. Input capacitance is 1210pF typical at Vds=15V, output capacitance 260pF, and reverse transfer capacitance 130pF. The body diode has a maximum forward voltage of 1.0V and typical reverse recovery time of 14ns.
Packaged in a TO-220AB through-hole package, the IRF3707ZPBF operates over a junction temperature range of -55°C to 175°C. Thermal resistance is 2.653°C/W junction-to-case and 62°C/W junction-to-ambient. This device is optimized for high-frequency synchronous buck converters used in computer processor power and other DC-DC applications requiring low conduction and switching losses.
30V.
TO-220-3 (TO-220AB) through-hole package.
-55°C to 175°C (junction temperature).
It is listed as RoHS3 compliant, but the compliance data is unverified and should be confirmed with official documentation.
Minimum 1.35V, typical 1.80V, maximum 2.25V at Id=25µA.
Maximum 9.5mΩ at Id=21A, Vgs=10V; typical 7.5mΩ.
Typical 9.7nC at Vgs=4.5V; maximum 15nC.