| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,568 pcs
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2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF3704ZPBF is an N-channel enhancement-mode power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-to-source voltage rating of 20V and a continuous drain current of 67A at 25°C case temperature. The device offers ultra-low on-resistance: typical 6.5mΩ (max 7.9mΩ) at VGS=10V, ID=21A, and typical 9.1mΩ (max 11.1mΩ) at VGS=4.5V, ID=17A, enabling high efficiency in switching applications.
The total gate charge is only 8.7nC typical (13nC max) at VDS=10V, VGS=4.5V, ensuring fast switching. Input capacitance is 1220pF at VDS=10V. The maximum power dissipation is 57W at TC=25°C, with a junction-to-case thermal resistance of 2.65°C/W. The operating junction temperature range is -55°C to 175°C.
This MOSFET is housed in a TO-220AB through-hole package, suitable for high-power through-hole mounting. It is designed for high-frequency synchronous buck converters and other DC-DC converter topologies requiring low conduction and switching losses. The ±20V gate-source voltage rating provides robust gate drive margin.
20 V
TO-220AB
-55°C to 175°C (junction)
67 A at TC=25°C
6.5 mΩ typical, 7.9 mΩ maximum