| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
600 pcs
|
600 pcs | On Request | 1 | On Request | On Request | 1831+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| BVDSS | |
| Configuration | |
| Continuous Drain Current (TC = 70 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source On-Resistance (Typical @ Vgs=10 V) | |
| Drain-Source On-Resistance (Typical @ Vgs=4.5 V) | |
| Gate Charge Total (Q2) | |
| Industrial Grade | |
| Mounting Type | |
| Packaging Type | |
| SVHC Present | |
| Standard Pack Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-to-Ambient | |
| Vgs (Max) |
The IRF3575DTRPBF is a dual N-channel MOSFET array designed for high-current switching applications. It features a drain-to-source voltage (Vdss) of 25V and a continuous drain current of 303A at Tc=25°C, with a typical on-resistance of 0.90 mΩ at Vgs=10V for the synchronous FET (Q2). The device is housed in a 32-PowerWFQFN surface-mount package (supplier package 32-PQFN 6x6mm) and is supplied in tape and reel packaging with a standard pack quantity of 3000 pieces.
This MOSFET array integrates two co-packed control and synchronous MOSFETs, making it suitable for single-phase synchronous buck converter designs. The typical gate charge (Qgd) is 5.2 nC, and the maximum gate-source voltage is 16V. The thermal resistance from junction to ambient is 19.1°C/W typical. The part is rated with MSL 2 and is lead-free (PbF) per the datasheet.
The drain-to-source voltage (Vdss) is 25V, with a minimum breakdown voltage (BVDSS) of 25V.
The continuous drain current is 303A at Tc=25°C and 243A at Tc=70°C.
Typical on-resistance (Rds(on)) for the synchronous FET (Q2) is 0.90 mΩ at Vgs=10V and 1.35 mΩ at Vgs=4.5V.
It comes in a 32-PowerWFQFN surface-mount package (supplier device package 32-PQFN 6x6mm).
The typical total gate charge (Qgd) is 5.2 nC.
The maximum gate-source voltage (Vgs Max) is 16V.
The typical thermal resistance from junction to ambient (Rth(JA)) is 19.1°C/W.