| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
118 pcs
|
118 pcs | On Request | 1 | On Request | On Request | 922 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Vgs(th) (Max) @ Id |
The IRF3515LPBF from Infineon Technologies is a high-performance N-Channel MOSFET belonging to the HEXFET® series. This component is designed for power switching applications, offering a drain-to-source voltage (Vdss) of 150V and a continuous drain current (Id) of 41A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 45 mOhm at 25A and 10V, a gate threshold voltage (Vgs(th)) of 4.5V maximum at 250µA, and a gate charge (Qg) of 107nC maximum at 10V. The input capacitance (Ciss) is rated at 2260pF maximum at 25V.
This MOSFET is housed in a surface-mount D2PAK package (TO-263-3, D²Pak (2 Leads + Tab), TO-263AB). It operates within a wide temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 200W (Tc). The packaging is supplied on an Original-Reel®.
This device is suitable for various power management and switching circuits where high current and voltage handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 150V.
The continuous drain current is 41A.
The package type is TO-263-3, D²Pak.
The maximum Rds On is 45 milliohms at 25A and 10V Vgs.
It operates from -55°C to 175°C.
It is RoHS3 compliant.