| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTE Electronics IRF350 is an N-Channel enhancement-mode MOSFET designed for high-voltage switching applications. It features a drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 14A. The device has a maximum on-resistance (Rds(on)) of 400 mOhm at a gate drive of 10V and a gate threshold voltage (Vgs(th)) of 4V. Gate charge (Qg) is 110 nC at 10V, and input capacitance (Ciss) is 2600 pF at 25V. Maximum power dissipation is 150W. The operating junction temperature range is -55°C to 150°C. The IRF350 is housed in a through-hole TO-204AA (TO-3) package, suitable for robust mounting in power circuits.
400V.
14A.
400 mOhm at 14A, 10V.
4V at 250µA.
-55°C to 150°C.
TO-204AA (TO-3) through-hole.
Listed as RoHS3 Compliant, but this is unverified.