| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF3415SPBF is an N-Channel enhancement-mode power MOSFET produced by Infineon Technologies. It is designed for high-efficiency power switching applications requiring a drain-source voltage rating of 150 V and a continuous drain current of 43 A. The device achieves a maximum on-resistance of 42 mOhm when driven with 10 V at the gate. Gate charge is typically 200 nC, and input capacitance is 2400 pF, enabling moderate-speed switching. The threshold voltage is 4 V maximum at 250 µA drain current. The MOSFET can dissipate up to 200 W when the case temperature is maintained, and operates across a junction temperature range of -55°C to 175°C. It is housed in a surface-mount D2PAK (TO-263) package with three leads and a tab for heat sinking. This component is suitable for power supply circuits, motor control, and DC-DC converter stages where high voltage and current handling are required.
The drain-source voltage (Vdss) is 150 V.
43 A at case temperature (Tc).
Maximum on-resistance is 42 mOhm at Vgs=10V, Id=22A.
Surface-mount D2PAK (TO-263-3) package.
Junction temperature range is -55°C to 175°C.
The component is listed as RoHS3 compliant, but this data is unverified and low confidence.
Maximum gate charge is 200 nC at Vgs=10V.