| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,745 pcs
|
8745 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,770 pcs
|
4770 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,238 pcs
|
3238 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF3415PBF is an N-Channel enhancement-mode power MOSFET manufactured by Infineon Technologies using MOSFET (Metal Oxide) technology. It is designed for high-efficiency power conversion and switching applications requiring a drain-to-source voltage rating of 150V and a continuous drain current of 43A at case temperature (Tc).
The device offers a maximum on-resistance of 42 milliohms at a gate-source voltage of 10V and a drain current of 22A, enabling low conduction losses. The total gate charge is 200 nC at 10V, and the input capacitance is 2400 pF at 25V drain-source bias. The gate threshold voltage is 4V maximum at 250µA drain current, and the maximum gate-source voltage rating is ±20V.
The IRF3415PBF is capable of dissipating up to 200W at case temperature and operates over a junction temperature range of -55°C to 175°C. It is supplied in a through-hole TO-220-3 package with a TO-220AB supplier device package, suitable for standard PCB mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
| 10+ | $1.67 | $1.67 |
| 50+ | $1.27 | $1.27 |
| 100+ | $1.14 | $1.14 |
| 500+ | $0.91 | $0.91 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 150V.
The continuous drain current is 43A at case temperature (Tc).
The maximum on-resistance is 42 milliohms at a gate-source voltage of 10V and drain current of 22A.
It is available in a TO-220-3 through-hole package with a TO-220AB supplier device package.
The operating junction temperature range is -55°C to 175°C.
The part is marked as RoHS3 compliant, though this is unverified in the current data.
The maximum gate threshold voltage is 4V at a drain current of 250µA.