| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation (Max) | |
| SVHC Present | |
| Supplier Device Package | |
| Technology |
The IRF332 is an N-Channel MOSFET from Infineon Technologies, supplied in a through-hole TO-204AA (TO-3) package. It is categorized as a single discrete MOSFET transistor.
This device is rated for a drain-to-source voltage of 400V and a continuous drain current of 4.5A. Its maximum power dissipation is 75W, making it appropriate for power-handling circuits in discrete semiconductor applications.
The MOSFET uses metal-oxide (MOSFET) technology and is designed for through-hole mounting on standard printed circuit boards. The supplier device package is TO-204AA (TO-3).
The IRF332 has a drain-to-source voltage rating of 400V.
The IRF332 has a maximum continuous drain current rating of 4.5A.
The IRF332 is available in a through-hole TO-204AA (TO-3) package.
The IRF332 has a maximum power dissipation of 75W.
The source data lists the IRF332 as RoHS3 compliant, but this has not been independently verified.