| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
99 pcs
|
99 pcs | On Request | 1 | On Request | On Request | 1019 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF3315SPBF is an N-Channel HEXFET power MOSFET from Infineon Technologies. It features a drain-source breakdown voltage of 150V and a continuous drain current rating of 21A at case temperature 25°C. The maximum on-resistance is 82mOhm at a gate drive of 10V and drain current of 12A.
This MOSFET offers a gate threshold voltage of 4V at 250µA drain current and a maximum gate charge of 95nC at 10V. Input capacitance is 1300pF at 25V drain-source voltage. The device is designed for efficient switching and can dissipate up to 94W at case temperature 25°C.
The IRF3315SPBF is housed in a surface mount D2PAK package (TO-263-3) and operates over a junction temperature range of -55°C to 175°C. It is suitable for power management, DC-DC converters, and motor control applications.
150V
21A at case temperature 25°C
82mOhm maximum at 12A drain current and 10V gate drive
4V maximum at 250µA drain current
-55°C to 175°C junction temperature
Surface mount D2PAK (TO-263-3)
RoHS3 compliant (unverified)