IRF3205STRLPBF N-Channel MOSFET with 55V drain-source voltage, 110A continuous drain current, and ultra-low 8mOhm on-resistance. Surface mount D2PAK package.
Mfr Part #:

IRF3205STRLPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 55V drain-source voltage, 110A continuous drain current, and ultra-low 8mOhm on-resistance. Surface mount D2PAK package.
✓ Total Stock: 4,220 pcs
$ Price Range: $0.62 - $2.18

IRF3205STRLPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,220 pcs
4220 pcs On Request 1 On Request On Request On Request On Request On Request

IRF3205STRLPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Package / Case
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF3205STRLPBF Description

Short technical summary and product information.

The IRF3205STRLPBF is a HEXFET power MOSFET from Infineon Technologies (formerly International Rectifier). It features advanced process technology for ultra-low on-resistance per silicon area, enabling high current handling in a compact D2PAK surface mount package. Key electrical specifications include a drain-source voltage (Vdss) of 55V, continuous drain current of 110A at 25°C case temperature (80A at 100°C), and a pulsed drain current rating of 390A. The maximum on-resistance is 8mOhm at 62A drain current and 10V gate drive. Gate threshold voltage ranges from 2V to 4V at 250µA. The device exhibits fast switching characteristics with a typical gate charge of 146nC at 10V and input capacitance of 3247pF at 25V Vds. It is fully avalanche rated with a repetitive avalanche energy of 20mJ. The operating junction temperature range is -55°C to 175°C, and the maximum power dissipation is 200W. The package is the surface-mount D2PAK (TO-263-3), suitable for high-current applications. The device is lead-free and RoHS compliant.

IRF3205STRLPBF Quick Information

Product Type: MOSFET
Series: HEXFET
Canonical Name: IRF3205STRLPBF N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IRF3205STRLPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRF3205STRLPBF Estimated Pricing

Qty Low High
1+ $2.18 $2.18
10+ $1.39 $1.39
50+ $1.05 $1.05
100+ $0.94 $0.94
800+ $0.71 $0.71
2,400+ $0.62 $0.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF3205STRLPBF Features

  • Ultra low 8mOhm on-resistance at 62A.
  • Rated for 55V drain-source voltage.
  • 110A continuous drain current capability.
  • Surface mount D2PAK package.
  • Lead-free and RoHS compliant.

IRF3205STRLPBF Applications

  • High current DC-DC converter designs.
  • Motor control and power management.
  • Switching power supplies and regulators.
  • Automotive and industrial applications.

IRF3205STRLPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF3205STRLPBF?

55V.

What is the maximum continuous drain current?

110A at 25°C case temperature, 80A at 100°C.

What is the on-resistance (Rds(on))?

8mOhm maximum at 62A drain current and 10V gate drive.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What package is the device available in?

D2PAK (TO-263-3) surface mount package.

Is the device RoHS compliant?

Yes, it is lead-free and RoHS3 compliant per the datasheet.

What is the gate charge (Qg)?

146nC maximum at 10V gate voltage.

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