| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,800 pcs
|
13800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Gate Charge | |
| Industrial Grade | |
| Input Capacitance | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The Vishay Dale IRF3205SPBF is a high-performance N-Channel MOSFET belonging to the HEXFET® series. It is designed for demanding applications requiring robust power handling capabilities.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) of 110A at 25°C. The on-state resistance (Rds On) is a low 8 mOhm at 62A and 10V gate-source voltage, ensuring efficient power transfer. It also features a gate charge (Qg) of 146nC at 10V and an input capacitance (Ciss) of 3247pF at 25V.
This MOSFET is housed in a surface-mount TO-263-3, D²Pak package, making it suitable for automated assembly processes. The maximum power dissipation is rated at 200W. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA.
This component is suitable for various power switching and control applications where high current and low on-resistance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 55V.
The continuous drain current is 110A at 25°C.
The Rds On is a maximum of 8 mOhm at 62A and 10V.
The maximum power dissipation is 200W.
The IRF3205SPBF is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
The IRF3205SPBF is a surface mount device.