| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,565 pcs
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6565 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF3205SPBF is an N-Channel power MOSFET manufactured by Infineon Technologies, part of the HEXFET family. It offers a drain-to-source breakdown voltage of 55V and a continuous drain current of 110A at 25°C case temperature, with pulsed drain current capability up to 390A. The device features an ultra-low on-resistance of 8 mΩ (maximum) at Vgs = 10V and Id = 62A, enabling high efficiency in power conversion applications.
This MOSFET is designed for fast switching and rugged operation, with a maximum power dissipation of 200W at 25°C case temperature and an operating junction temperature range of -55°C to 175°C. It includes fully avalanche-rated capability with an avalanche current of 62A and repetitive avalanche energy of 20 mJ. The device also features a peak diode recovery dv/dt rating of 5.0 V/ns.
The IRF3205SPBF is supplied in a surface-mount D2PAK package (TO-263-3), which provides low internal connection resistance and is suitable for high-current applications. The package can dissipate up to 2.0W in a typical surface mount application. The device is lead-free and RoHS compliant per the datasheet.
The maximum drain-to-source voltage (Vdss) is 55V.
The continuous drain current is 110A at Tc=25°C and 80A at Tc=100°C.
The maximum on-resistance (Rds(on)) is 8 mΩ at Vgs=10V and Id=62A.
The IRF3205SPBF is supplied in a surface mount D2PAK package (TO-263-3).
The operating junction temperature range is -55°C to 175°C.
The datasheet indicates the device is lead-free and RoHS compliant.