| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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50,000 pcs
|
50000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF3205PBF is an N-Channel enhancement mode power MOSFET from Infineon Technologies, originally developed by International Rectifier. It is designed for high-efficiency power switching applications requiring low on-resistance and high current handling capability. With a drain-to-source voltage rating of 55V and continuous drain current of 110A at 25°C, this device is suitable for demanding power conversion circuits.
The device features an ultra-low on-resistance of only 8 mOhm maximum at Vgs=10V and Id=62A, which minimizes conduction losses. The gate threshold voltage ranges from 2V to 4V, allowing logic-level drive capability. The MOSFET is fully avalanche rated with a maximum avalanche current of 62A and repetitive avalanche energy of 20 mJ, ensuring robustness in harsh environments.
Packaged in the industry-standard TO-220-3 (TO-220AB) through-hole package, the IRF3205PBF offers excellent thermal performance with a junction-to-case thermal resistance of 0.75°C/W. The operating junction temperature ranges from -55°C to 175°C. The device is lead-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.58 | $2.58 |
| 10+ | $1.65 | $1.65 |
| 50+ | $1.26 | $1.26 |
| 100+ | $1.13 | $1.13 |
| 500+ | $0.90 | $0.90 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55V
TO-220-3 (TO-220AB) through-hole package
-55°C to 175°C
Yes, RoHS3 Compliant and lead-free verified by datasheet title
Maximum 8 mOhm at Vgs=10V, Id=62A
110A at Tc=25°C, 80A at Tc=100°C
2V to 4V