| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | 939 | On Request | On Request |
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| Manufacturer Name | |
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The IRF3205 is an N-channel power MOSFET manufactured using advanced process technology. It is known for its extremely low on-resistance and fast switching speed, making it a suitable component for digital circuit design. This HEXFET power field-effect transistor is widely applied in inverters, motor speed controllers, and motor drivers.
Key electrical specifications include a continuous drain current of 110A and a drain-source voltage of 55V. The on-resistance (RDS(ON)) is as low as 0.008 Ohms, which helps reduce power loss and improve efficiency. It also features a drain-source breakdown voltage of 60V and a gate threshold voltage of ±20V.
The operating and storage temperature range is from -55°C to 175°C. The IRF3205 possesses high current handling and voltage tolerance capabilities, enabling high power output. It is designed for applications requiring a reliable switching element or a power amplifier that can handle high currents and voltages.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current (ID) for the IRF3205 MOSFET is 110A.
The drain-source voltage rating for the IRF3205 is 55V.
The on-resistance (RDS(ON)) of the IRF3205 is 0.008 Ohms.
The operating and storage temperature range for the IRF3205 is -55°C to 175°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.