| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,597 pcs
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2597 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
313 pcs
|
313 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Quantity | |
| SVHC Present |
The Infineon IRF300P226 is a high-performance N-channel MOSFET designed for various power applications. It features a maximum drain-source voltage of 300V and a low typical on-resistance of 16mΩ, with a maximum of 19mΩ.
This MOSFET can handle a continuous drain current of 100A at 25°C case temperature and 71A at 100°C. It also supports a pulsed drain current of up to 375A and has a maximum power dissipation of 556W at 25°C.
The IRF300P226 is built with enhanced ruggedness, including improved Gate, Avalanche, and Dynamic dv/dt capabilities, as well as enhanced body diode dv/dt and di/dt performance. It is suitable for applications such as UPS, inverters, half-bridge and full-bridge topologies, resonant mode power supplies, DC/DC and AC/DC converters, OR-ing and redundant power switches, and motor drive applications.
The component is housed in a TO-247AC package, suitable for through-hole mounting. It is RoHS compliant, Pb-Free, and Halogen-Free.
300V.
TO-247AC.
-55 to +175 °C.
100A at TC=25°C.
16mΩ.
556W at TC=25°C.
375A at TC=25°C.