IRF3000 The IRF3000 is an N-Channel Power MOSFET from Infineon Technologies featuring a 300V drain-source breakdown voltage and 1.6A continuous drain current. It comes in an 8-SOIC surface mount package.
Mfr Part #:

IRF3000

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IRF3000 is an N-Channel Power MOSFET from Infineon Technologies featuring a 300V drain-source breakdown voltage and 1.6A continuous drain current. It comes in an 8-SOIC surface mount package.
✓ Total Stock: 3,600 pcs

IRF3000 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request

IRF3000 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF3000 Description

Short technical summary and product information.

The IRF3000 is a 300V N-Channel Power MOSFET from Infineon Technologies, optimized for high-frequency DC-DC converter and SMPS applications. It features a low typical on-resistance of 0.34 ohms (0.4 ohms maximum) at VGS=10V, enabling efficient power switching. The device supports continuous drain current up to 1.6A at 25°C and pulsed current up to 13A.

 

Electrical characteristics include a gate threshold voltage range of 3V to 5V, total gate charge of 22 nC typical (33 nC maximum), and input capacitance of 730 pF. Switching performance is specified with turn-on delay of 8.2 ns and fall time of 23 ns, making it suitable for high-speed power conversion.

 

The MOSFET is housed in an 8-SOIC surface-mount package (3.90mm width) with an operating junction temperature range of -55°C to 150°C. Thermal resistance is 50°C/W junction-to-ambient and 20°C/W junction-to-lead. Avalanche energy rating is 47 mJ, and peak diode recovery dv/dt is 8.9 V/ns.

IRF3000 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: IRF3000 N-Channel Power MOSFET
Subcategory: Single Power MOSFET

IRF3000 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected

IRF3000 Features

  • N-Channel MOSFET with 300V breakdown voltage.
  • Low on-resistance of 0.4 ohms maximum.
  • Rated for 1.6A continuous drain current.
  • Surface mount in 8-SOIC package.
  • Optimized for high frequency DC-DC converters.

IRF3000 Applications

  • High-frequency DC-DC converter designs.
  • Switched-mode power supply (SMPS) circuits.
  • Power management and switching applications.

IRF3000 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IRF3000?

The IRF3000 has a minimum drain-source breakdown voltage of 300V at ID=250µA.

What package does the IRF3000 come in?

The IRF3000 is available in an 8-SOIC surface mount package (0.154", 3.90mm Width, supplier package 8-SO).

What is the operating temperature range of the IRF3000?

The operating temperature range is -55°C to 150°C (junction).

Is the IRF3000 RoHS compliant?

The IRF3000 is listed as RoHS3 Compliant, but this status is unverified.

What is the typical on-resistance of the IRF3000?

The typical static drain-to-source on-resistance is 0.34 ohms, with a maximum of 0.4 ohms at VGS=10V and ID=0.96A.

What is the maximum continuous drain current?

The maximum continuous drain current is 1.6A at 25°C ambient temperature.

Home

Categories