| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,020 pcs
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4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The IRF2907ZPBF is a HEXFET Power MOSFET designed for high-efficiency power switching applications. It features an N-Channel enhancement mode with a drain-source voltage (Vdss) of 75V and a continuous drain current rating of 160A (wirebond limited) at 25°C (170A silicon limited). The device offers an ultra-low maximum on-resistance of 4.5 mΩ at Vgs=10V, enabling high current handling with minimal conduction losses.
Key electrical characteristics include a total gate charge of 270 nC (max) and an input capacitance of 7500 pF (max), which support fast switching speeds. The MOSFET is rated for a maximum power dissipation of 300W at Tc=25°C and has a linear derating factor of 2 W/°C. The junction operating temperature range is -55°C to 175°C, making it suitable for demanding thermal environments.
The device is housed in a TO-220-3 through-hole package (TO-220AB) with a lead-free (PbF) finish. It is suitable for applications such as switching power supplies, DC-DC converters, motor drives, and high-power inverter circuits. The advanced HEXFET process technology ensures high reliability and repetitive avalanche capability up to 690 mJ tested.
The drain-source voltage (Vdss) is 75V minimum.
The IRF2907ZPBF is available in a TO-220-3 package (through-hole), with supplier device package TO-220AB.
The operating junction temperature range is from -55°C to 175°C.
The part is listed as RoHS3 compliant, but this status is unverified. The part number suffix PbF indicates lead-free packaging, which is confirmed in the datasheet.
The continuous drain current is 160A (wirebond limited) at 25°C, and 120A at 100°C.
The maximum static drain-to-source on-resistance is 4.5 mΩ at Vgs=10V and Id=75A.