| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,400 pcs
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6400 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF2807STRRPBF is an N-channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source voltage rating of 75V and a continuous drain current of 82A at 25°C. The device offers ultra-low on-resistance of 13 mOhm maximum at 43A and 10V gate drive, enabling efficient power switching.
This MOSFET is designed for fast switching with a total gate charge of 160 nC and input capacitance of 3820 pF. It is fully avalanche rated with an avalanche current of 43A and repetitive avalanche energy of 23 mJ. The operating junction temperature range extends from -55°C to 175°C, suitable for demanding environments.
The device is housed in a surface mount D2PAK (TO-263-3) package, capable of dissipating up to 230W at 25°C case temperature. It is lead-free and RoHS3 compliant, supporting environmentally conscious design.
Typical applications include high current switching power supplies, DC-DC converters, motor drives, and automotive systems where high efficiency and reliability are required.
The drain-source voltage (Vdss) is 75 V minimum.
The package is TO-263-3, D²Pak (2 Leads + Tab), also known as D2PAK (Supplier Device Package).
The operating junction temperature range is -55°C to 175°C.
The part is marked as RoHS3 compliant (unverified) and is lead-free as confirmed by the datasheet.
The continuous drain current is 82 A at 25°C case temperature, and 58 A at 100°C.
The gate threshold voltage (Vgs(th)) is minimum 2 V and maximum 4 V at Id = 250 µA.
The maximum drain-to-source on-resistance is 13 mOhm at Id = 43 A and Vgs = 10 V.