| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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26,008 pcs
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26008 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRF2807SPBF is an advanced HEXFET Power MOSFET utilizing sophisticated processing techniques to achieve extremely low on-resistance per silicon area. This device offers a continuous drain current of 82A at 25°C and a maximum drain-source voltage of 75V. Its on-resistance is rated at a low 13mOhm.
Designed for high current applications, the IRF2807SPBF comes in a D2Pak surface mount package, known for its high power capability and low internal connection resistance. This package is suitable for dissipating significant power. The MOSFET also boasts fast switching speeds and a ruggedized design, making it a reliable choice for various applications.
Key electrical characteristics include a pulsed drain current of 280A, a power dissipation of 230W at 25°C, and a gate-to-source voltage tolerance of ±20V. The operating junction and storage temperature range is from -55°C to +175°C. The device is fully avalanche rated and lead-free.
This MOSFET is well-suited for designers seeking an efficient and reliable component for power management tasks. Its advanced processing and robust design ensure performance in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 82A at 25°C with a VGS of 10V.
The on-resistance is a maximum of 13mOhm.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in a D2Pak surface mount package.
Yes, it is RoHS3 Compliant.