IRF2807SPBF IRF2807SPBF is a N-Channel MOSFET from Infineon Technologies with 75V drain-source voltage and 82A continuous drain current. It features ultra-low on-resistance of 13mΩ and is housed in a D2PAK surface mount package.
Mfr Part #:

IRF2807SPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRF2807SPBF is a N-Channel MOSFET from Infineon Technologies with 75V drain-source voltage and 82A continuous drain current. It features ultra-low on-resistance of 13mΩ and is housed in a D2PAK surface mount package.
✓ Total Stock: 4,500 pcs

IRF2807SPBF Available from 1 distributor

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IRF2807SPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF2807SPBF Description

Short technical summary and product information.

The IRF2807SPBF is an N-Channel Power MOSFET using Infineon's advanced HEXFET technology. It is designed for high current switching applications and offers a maximum drain-source voltage of 75V and a continuous drain current of 82A at 25°C (58A at 100°C). The device features an ultra-low on-resistance of 13mΩ (maximum at 43A, 10V gate drive), which minimizes conduction losses.

 

This MOSFET is fully avalanche rated with a repetitive avalanche energy capability of 23mJ and a peak diode recovery dv/dt of 5.9 V/ns. It has a total gate charge of 160nC at 10V and an input capacitance of 3820pF at 25V, enabling fast switching performance. The gate threshold voltage ranges from 2.0V to 4.0V, and the maximum gate-source voltage is ±20V.

 

The device is packaged in a D2PAK (TO-263) surface mount package, which offers high power dissipation capability (230W at 25°C case temperature) with a low thermal resistance junction-to-case of 0.75°C/W. The operating junction temperature range is -55°C to 175°C. The IRF2807SPBF is lead-free per the datasheet and is suitable for applications such as DC-DC converters, motor drives, and power supply switching stages.

IRF2807SPBF Quick Information

Product Type: N-Channel MOSFET
Series: IRF2807SPbF
Canonical Name: IRF2807SPBF N-Channel MOSFET, 75V, 82A, D2PAK
Subcategory: Single N-Channel MOSFET

IRF2807SPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: No

IRF2807SPBF Features

  • Ultra low on-resistance of 13mΩ.
  • Avalanche rated for rugged operation.
  • Operating temperature up to 175°C.
  • Surface mount D2PAK package.
  • Fast switching HEXFET technology.

IRF2807SPBF Applications

  • Used in high current DC-DC converters.
  • Suitable for motor drive circuits.
  • Ideal for power supply switching stages.
  • Applicable in automotive high current loads.

IRF2807SPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The maximum drain-source voltage (Vdss) is 75V.

What is the continuous drain current?

The continuous drain current is 82A at Tc=25°C and 58A at Tc=100°C.

What is the on-resistance?

The maximum drain-source on-resistance is 13mΩ at Id=43A and Vgs=10V.

What is the package type?

The device is packaged in D2PAK (TO-263-3, D²Pak).

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the part RoHS compliant?

The part is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.

What is the gate threshold voltage?

The gate threshold voltage ranges from 2.0V to 4.0V (tested at VDS=VGS, ID=250µA).

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