Mfr Part #:

IRF2807S

N-Channel power MOSFET with 75V drain-source voltage and 82A continuous drain current. Designed for high-current switching applications.

✓ Total Stock: 2,568 pcs

$ Price Range: $2.28

IRF2807S Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	2,568 pcs On Request	2568 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRF2807S Description

Short technical summary and product information.

The IRF2807S is an N-Channel power MOSFET manufactured by Infineon Technologies, originally developed by International Rectifier using advanced HEXFET processing technology. It offers extremely low on-resistance per silicon area, combined with fast switching speed and ruggedized design.

Key electrical specifications include a drain-to-source voltage of 75V, continuous drain current of 82A at Tc=25°C (58A at Tc=100°C), and pulsed drain current of 280A. The maximum on-resistance is 13mΩ at Vgs=10V, Id=43A. Gate threshold voltage ranges from 2.0V to 4.0V. Typical forward transconductance is 38S. The device features 3820pF input capacitance and 160nC total gate charge at Vgs=10V.

The MOSFET is fully avalanche rated with an avalanche current of 43A and repetitive avalanche energy of 23mJ. Peak diode recovery dv/dt is 5.9V/ns. Maximum power dissipation is 230W at Tc=25°C, with a junction-to-case thermal resistance of 0.75°C/W and junction-to-ambient (PCB mount) of 40°C/W. Operating junction temperature range is -55°C to 175°C.

The IRF2807S is offered in a surface-mount D2PAK package (TO-263-3, D²Pak). The device is lead-free per the datasheet. It is suitable for a wide variety of high-current power conversion and motor control applications.

IRF2807S Quick Information

Product Type: MOSFET

Series: IRF2807S

Canonical Name: IRF2807S N-Channel Power MOSFET

Subcategory: Single MOSFETs

IRF2807S Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: No

IRF2807S Estimated Pricing

Qty	Low	High
50+	$2.28	$2.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF2807S Features

Ultra low on-resistance of 13 mOhm.
High continuous drain current of 82 A.
Avalanche rated for robust operation.
Fast switching HEXFET technology.
Surface mount D2PAK package.

IRF2807S Applications

Use in high-current power supplies.
Suitable for DC-DC converter circuits.
Ideal for motor control applications.
Applicable in automotive systems.

IRF2807S FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the IRF2807S?

75V.

What package is the IRF2807S available in?

Surface mount D2PAK (TO-263-3, D²Pak).

What is the operating temperature range?

-55°C to 175°C.

Is the IRF2807S RoHS compliant?

The datasheet indicates lead-free manufacturing, but RoHS compliance is unverified.

What is the maximum continuous drain current?

82A at Tc=25°C, 58A at Tc=100°C.

What is the maximum power dissipation?

230W at Tc=25°C.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	82 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	160 nC
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	3820 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	230 W
Rds On (Max) @ Id, Vgs	13 mOhm
Storage Temperature	-55.0°C ~ 175.0°C
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	2.0 V ~ 4.0 V