| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
41,000 pcs
|
41000 pcs | On Request | 1 | On Request | On Request | 2031+ | On Request | On Request | |
|
35,000 pcs
|
35000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The Infineon IRF2807PBF is an advanced HEXFET Power MOSFET utilizing sophisticated processing techniques to achieve exceptionally low on-resistance per silicon area. This, combined with fast switching speeds and a ruggedized design, makes it suitable for a wide range of applications.
Key electrical specifications include a drain-source breakdown voltage of 75V, a continuous drain current of 82A at 25°C (58A at 100°C), and a low on-resistance of 13mΩ. The device operates over a wide temperature range from -55°C to +175°C.
Packaged in the industry-standard TO-220AB through-hole package, the IRF2807PBF is well-suited for commercial and industrial applications with power dissipation levels up to approximately 50 watts. Its low thermal resistance and cost-effectiveness contribute to its widespread acceptance.
This MOSFET is fully avalanche rated and features a dynamic dv/dt rating, ensuring reliability in demanding applications. The lead-free designation indicates compliance with environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the IRF2807PBF is 75V.
The continuous drain current at 25°C (Vgs=10V) for the IRF2807PBF is 82A.
The typical on-resistance (Rds(on)) for the IRF2807PBF is 13mΩ.
The IRF2807PBF is supplied in a TO-220AB package.
The operating junction and storage temperature range for the IRF2807PBF is -55°C to +175°C.