| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,270 pcs
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7270 pcs | On Request | 1 | On Request | On Request | 21 | On Request | On Request | |
|
958 pcs
|
958 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The Vishay Dale IRF2807PBF is an advanced HEXFET Power MOSFET utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area. This MOSFET offers a continuous drain current of 82A at 25°C case temperature and a drain-source voltage of 75V. Its on-resistance is a low 13mΩ typical.
Designed for commercial-industrial applications, the IRF2807PBF comes in a universally preferred TO-220AB package. This package offers low thermal resistance and contributes to its wide acceptance in the industry. The device operates across a wide temperature range from -55°C to +175°C, ensuring reliability in demanding environments.
Key electrical characteristics include a pulsed drain current of 280A and a power dissipation of 230W at 25°C. The MOSFET also features a fast switching speed and is fully avalanche rated, making it suitable for a variety of power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 75V.
The typical on-resistance is 13mΩ.
The continuous drain current at 25°C is 82A.
The package type is TO-220AB.
The operating junction and storage temperature range is -55°C to +175°C.