| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
55,020 pcs
|
55020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF2807PBF is a HEXFET power MOSFET from Infineon Technologies (formerly International Rectifier). It is designed for high-efficiency power switching applications. With a drain-to-source voltage rating of 75V and continuous drain current of 82A at 25°C, it can handle significant power. The device features an ultra-low on-resistance of 13mOhm at 43A and 10V gate drive, enabling high efficiency. The MOSFET is fully avalanche rated and has fast switching characteristics. It is housed in a through-hole TO-220AB package, which offers low thermal resistance and ease of mounting. The junction temperature range is -55°C to 175°C. This component is lead-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.08 | $2.08 |
| 10+ | $1.33 | $1.33 |
| 50+ | $1.00 | $1.00 |
| 100+ | $0.90 | $0.90 |
| 500+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
75 V.
82 A at Tc=25°C, Vgs=10V; 58 A at Tc=100°C.
TO-220AB (through-hole).
Junction temperature range: -55°C to 175°C.
RoHS3 compliant (unverified, low confidence).
13 mOhm maximum at Id=43A, Vgs=10V.
160 nC maximum at Vgs=10V.