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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | 401H | On Request | On Request |
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The IRF2807 is an N-Channel Power MOSFET designed for efficiency and reliability in a wide range of applications. It features a breakdown voltage of 75V and a maximum on-resistance (RDS(on)) of 9.4mΩ, indicating low conduction losses.
This MOSFET is housed in a universally preferred TO-220AB package, suitable for commercial-industrial applications with power dissipation up to approximately 50 watts. It has a maximum continuous current rating of 75A and operates across a wide temperature range from -55°C to 175°C.
The device is known for its fast switching speed and rugged design, characteristic of HEXFET Power MOSFETs. Its specifications make it a suitable choice for power management and switching applications where performance and durability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (Vds) is 75V.
The maximum continuous drain current (Id) is 75A.
The maximum RDS(on) is 9.4mΩ.
The IRF2807 is available in a TO-220AB package.
The operating junction temperature range is -55°C to 175°C.
The threshold voltage (Vgs(th)) is 4V.
The input capacitance (Ciss) is 3.27nF.