IRF2804STRLPBF N-Channel MOSFET with 40V drain-source voltage and 75A continuous drain current. Ultra-low on-resistance of 2.0mΩ max in a D2PAK surface mount package.
Mfr Part #:

IRF2804STRLPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 40V drain-source voltage and 75A continuous drain current. Ultra-low on-resistance of 2.0mΩ max in a D2PAK surface mount package.
✓ Total Stock: 4,220 pcs
$ Price Range: $1.22 - $3.84

IRF2804STRLPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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4,220 pcs
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IRF2804STRLPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF2804STRLPBF Description

Short technical summary and product information.

The IRF2804STRLPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source voltage rating of 40V and a continuous drain current of 75A (package limited) at Tc=25°C, with a silicon-limited capability of 270A. The device offers an ultra-low on-resistance of 2.0mΩ maximum at Vgs=10V, Id=75A, enabling high-efficiency operation.

 

Key electrical characteristics include a gate threshold voltage of 2.0V to 4.0V, total gate charge of 160nC typical (240nC maximum), and input capacitance of 6450pF. The MOSFET is avalanche rated with a single pulse avalanche energy of 540mJ (thermally limited) and a tested value of 1160mJ. Maximum power dissipation is 300W at Tc=25°C, with a junction-to-case thermal resistance of 0.50°C/W.

 

The device is housed in a D2PAK (TO-263) surface mount package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 175°C. The IRF2804STRLPBF is designed for fast switching and repetitive avalanche capability, making it ideal for high-efficiency power conversion applications such as DC-DC converters, motor drives, and power management systems.

IRF2804STRLPBF Quick Information

Product Type: Power MOSFET
Series: IRF2804
Canonical Name: IRF2804STRLPBF N-Channel MOSFET 40V 75A D2PAK
Subcategory: Single MOSFETs

IRF2804STRLPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Moisture Sensitivity Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRF2804STRLPBF Estimated Pricing

Qty Low High
1+ $3.84 $3.84
10+ $2.51 $2.51
50+ $1.94 $1.94
100+ $1.75 $1.75
800+ $1.36 $1.36
2,400+ $1.22 $1.22

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF2804STRLPBF Features

  • Ultra-low on-resistance of 2.0mΩ max.
  • High continuous drain current up to 75A.
  • 175°C maximum junction temperature.
  • Fast switching HEXFET technology.
  • Avalanche rated for ruggedness.

IRF2804STRLPBF Applications

  • Used in high-efficiency DC-DC converters.
  • Ideal for motor drive and power management.
  • Suitable for automotive and industrial applications.
  • Employed in synchronous rectification circuits.

IRF2804STRLPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

40V.

What is the continuous drain current?

75A (package limited) at Tc=25°C, Vgs=10V.

What is the on-resistance?

2.0mΩ maximum at Vgs=10V, Id=75A.

What is the operating temperature range?

-55°C to 175°C (junction).

What package is this device available in?

D2PAK (TO-263-3, D²Pak).

Is this device RoHS compliant?

Yes, RoHS3 compliant.

What is the gate threshold voltage?

2.0V minimum, 4.0V maximum.

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