| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,436 pcs
|
1436 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF2804STRL7PP is a HEXFET® power MOSFET from Infineon Technologies (originally International Rectifier) designed for automotive and high-current switching applications. It features a drain-source voltage rating of 40V and a continuous drain current of 160A (package limited) with a silicon-limited capability of 320A. The ultra-low on-resistance is typically 1.6mOhm maximum at 160A gate drive of 10V, minimizing conduction losses.
Electrical characteristics include a gate threshold voltage of 4V maximum at 250µA, a gate charge of 260nC at 10V, and an input capacitance of 6930pF at 25V. The device supports fast switching and repetitive avalanche operation, with single pulse avalanche energy ratings of 630mJ (thermally limited) and 1050mJ (tested). Maximum power dissipation is 330W at case temperature 25°C, with a junction-to-case thermal resistance of 0.5°C/W and a junction-to-ambient thermal resistance of 40°C/W (PCB mount, steady state).
Packaged in a TO-263-7 (D2PAK, 7-lead) surface mount package, this MOSFET operates over a junction temperature range of -55°C to 175°C. It is suitable for automotive power systems, DC-DC converters, motor drives, and other high-current switching applications requiring low resistance and high efficiency.
The drain-source voltage (Vdss) is 40 V.
Package limited: 160 A at Tc=25°C. Silicon limited: 320 A at Tc=25°C, Vgs=10V.
Maximum 1.6 mOhm at Id=160A, Vgs=10V.
Junction temperature range: -55°C to 175°C.
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB; also known as D2PAK (7-Lead). Surface mount.
RoHS3 compliant, but this status is unverified (low confidence).
Maximum 4 V at Id=250 µA.