| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,270 pcs
|
1270 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF2804PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source voltage rating of 40V and a continuous drain current of 75A (package limited at Tc=25°C) or 270A (silicon limited). The on-resistance is typically 1.8 mΩ and maximum 2.3 mΩ at Vgs=10V and Id=75A. Gate threshold voltage ranges from 2V to 4V. Total gate charge is 240 nC maximum, enabling fast switching. Input capacitance is 6450 pF at Vds=25V. The device can dissipate up to 300W and operates over a junction temperature range of -55°C to 175°C. It is housed in a TO-220-3 (TO-220AB) through-hole package and is lead-free and RoHS3 compliant. The MOSFET also offers high avalanche energy capability with a single pulse avalanche energy of 540 mJ (thermally limited) and tested up to 1160 mJ. These characteristics make it suitable for high-current, low-voltage switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.63 | $2.63 |
| 10+ | $1.69 | $1.69 |
| 50+ | $1.28 | $1.28 |
| 100+ | $1.15 | $1.15 |
| 500+ | $0.93 | $0.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
TO-220-3 (TO-220AB).
-55°C to 175°C (junction).
Yes, RoHS3 compliant and lead-free.
75A (package limited at Tc=25°C) or 270A (silicon limited).
Typical 1.8 mΩ, maximum 2.3 mΩ at Vgs=10V, Id=75A.
Maximum 240 nC, typical 160 nC at Vgs=10V.