IRF250P224 IRF250P224 is an N-Channel MOSFET from Infineon Technologies with a maximum drain-source voltage of 250V and continuous drain current of 128A at 25°C. It features a low on-resistance of 12mOhm and is housed in a TO-247AC through-hole package.
Mfr Part #:

IRF250P224

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRF250P224 is an N-Channel MOSFET from Infineon Technologies with a maximum drain-source voltage of 250V and continuous drain current of 128A at 25°C. It features a low on-resistance of 12mOhm and is housed in a TO-247AC through-hole package.
✓ Total Stock: 96 pcs

IRF250P224 Available from 1 distributor

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IRF250P224 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF250P224 Description

Short technical summary and product information.

The IRF250P224 is an N-Channel enhancement mode MOSFET from Infineon Technologies, part of the StrongIRFET family. It is designed for high-power switching applications requiring high efficiency and ruggedness. Key electrical specifications include a maximum drain-source voltage (Vdss) of 250V, a continuous drain current (Id) of 128A at 25°C case temperature (90A at 100°C), and a pulsed drain current capability of 512A. The maximum on-resistance (Rds(on)) is 12mOhm at 58A and 10V gate drive, with a typical value of 9.0mOhm. The device features a total gate charge (Qg) of 203nC maximum at 10V and an input capacitance (Ciss) of 9915pF at 50V drain-source voltage. Maximum power dissipation is 556W at 25°C case temperature, with a junction-to-case thermal resistance of 0.27°C/W. The operating junction temperature range is -55°C to 175°C. The IRF250P224 is supplied in a TO-247AC (TO-247-3) through-hole package and is available in tube packaging with a standard quantity of 25. The device is Pb-Free and Halogen-Free per the datasheet, and is suitable for applications such as UPS systems, inverters, half-bridge and full-bridge converters, resonant mode power supplies, DC/DC converters, OR-ing circuits, and motor drives.

IRF250P224 Quick Information

Product Type: MOSFET
Series: StrongIRFET
Canonical Name: IRF250P224 N-Channel MOSFET 250V 128A TO-247AC
Subcategory: N-Channel MOSFET

IRF250P224 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IRF250P224 Features

  • N-Channel MOSFET with 250V drain-source voltage.
  • Continuous drain current up to 128A.
  • Low on-resistance of 12mOhm maximum.
  • TO-247AC through-hole package.
  • Pb-Free and Halogen-Free compliant.

IRF250P224 Applications

  • Ideal for UPS and inverter applications.
  • Suitable for half-bridge and full-bridge topologies.
  • Used in DC/DC and AC/DC converters.
  • Designed for brushed and BLDC motor drives.
  • Applicable in battery powered circuits.

IRF250P224 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

250V.

What is the package type?

TO-247-3 (TO-247AC) through-hole.

What is the operating temperature range?

-55°C to 175°C (junction).

Is the IRF250P224 RoHS compliant?

The datasheet indicates RoHS3 compliant and Pb-Free, but this is unverified. Verify with manufacturer.

What is the continuous drain current at 25°C?

128A (from datasheet).

What is the on-resistance?

12mOhm maximum at 58A, 10V; typical 9.0mOhm.

What is the gate charge?

203nC maximum at 10V.

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