IRF230 N-Channel MOSFET with 200V drain-source breakdown voltage and 9A continuous drain current. Features 400mOhm on-resistance at 5A, 10V gate drive, and through-hole TO-3 package.
Mfr Part #:

IRF230

Available from 2 distributors
Mfr Name: Harris Semiconductor
Harris Semiconductor
N-Channel MOSFET with 200V drain-source breakdown voltage and 9A continuous drain current. Features 400mOhm on-resistance at 5A, 10V gate drive, and through-hole TO-3 package.
✓ Total Stock: 3,606 pcs
$ Price Range: $2.74

IRF230 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,569 pcs
3569 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
37 pcs
37 pcs On Request 1 On Request On Request On Request On Request On Request

IRF230 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF230 Description

Short technical summary and product information.

The IRF230 is an N-Channel enhancement-mode MOSFET manufactured by Harris Semiconductor. It is designed for high-voltage switching applications with a maximum drain-source voltage of 200V and continuous drain current of 9A at case temperature. The device features a maximum on-resistance of 400mOhm at 5A drain current and 10V gate-source voltage, ensuring efficient power handling.

 

Key electrical characteristics include a gate threshold voltage of 4V maximum at 250µA drain current, and a maximum gate-source voltage rating of ±20V. The input capacitance is 600pF at 25V drain-source, and the total gate charge is 30nC at 10V gate drive, enabling moderate switching speeds. Maximum power dissipation is 75W at case temperature, with an operating junction temperature range of -55°C to 150°C.

 

The device is housed in a through-hole TO-204AA (TO-3) package, suitable for mounting on heatsinks in power supply, motor control, and other industrial applications. The robust metal package provides excellent thermal performance and reliability in harsh environments.

IRF230 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: IRF230 N-Channel MOSFET
Subcategory: Single MOSFET

IRF230 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF230 Estimated Pricing

Qty Low High
1+ $2.74 $2.74

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF230 Features

  • N-Channel MOSFET with 200V drain-source rating.
  • Continuous drain current of 9A at case temperature.
  • Low on-resistance of 400mOhm at 5A, 10V.
  • Through-hole TO-3 package for easy mounting.
  • Operating temperature range -55°C to 150°C.

IRF230 Applications

  • Suitable for high-voltage power switching circuits.
  • Used in DC-DC converters and motor drives.
  • Ideal for linear amplifier output stages.
  • Applicable in industrial power supplies.

IRF230 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF230?

200V maximum.

What is the maximum drain current?

9A at case temperature.

What is the on-resistance?

400mOhm maximum at 5A drain current and 10V gate-source voltage.

What is the gate threshold voltage?

4V maximum at 250µA drain current.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is the IRF230 available in?

Through-hole TO-204AA (TO-3) package.

Is the IRF230 RoHS compliant?

RoHS3 compliant (unverified).

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