| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,362 pcs
|
3362 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The IRF224 is an N-Channel enhancement-mode MOSFET manufactured by Infineon Technologies. It features a drain-to-source voltage (Vdss) of 250V and a continuous drain current of 3.8A, making it suitable for medium-voltage switching applications. The device utilizes MOSFET (Metal Oxide) technology and is designed for through-hole mounting.
The IRF224 is housed in a TO-204AA (TO-3) package, which provides robust mechanical support and efficient heat dissipation. With a maximum power dissipation of 40W, this MOSFET can handle moderate power levels in various circuit designs. The hermetic construction ensures reliable operation in demanding environments.
This component is ideal for use in power supply circuits, motor control systems, and other applications requiring high-voltage switching with moderate current handling. The N-Channel configuration allows for easy integration into standard switching topologies.
The IRF224 has a drain-to-source voltage (Vdss) of 250V.
The continuous drain current is 3.8A.
The maximum power dissipation is 40W.
The IRF224 is available in a TO-204AA (TO-3) through-hole package.
The RoHS status is unverified; precomputed data indicates RoHS3 Compliant but distributor data indicates Non-RoHS.
The IRF224 uses through-hole mounting.