| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,333 pcs
|
12333 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
|
1,480 pcs
|
1480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Form | |
| Halogen Free | |
| Mounting Type | |
| Package / Case |
The Infineon IRF200S234 is a high-performance N-channel MOSFET belonging to the StrongIRFET™ family. It is engineered for demanding applications such as brushed and BLDC motor drives, battery-powered circuits, and DC/DC converters.
Key electrical specifications include a maximum Drain-Source Voltage (VDS) of 200V and a continuous Drain Current (ID) of 90A at 25°C case temperature. The on-resistance (RDS(on)) is rated at a maximum of 16.9mΩ at VGS=10V. The device also features a pulsed drain current capability of 312A and a maximum power dissipation of 417W at 25°C.
This MOSFET is housed in a D2-PAK package, suitable for surface mounting. It operates within a junction temperature range of -55°C to +175°C. The component is Pb-Free and Halogen-Free, indicating compliance with environmental standards.
The maximum Drain-Source Voltage (VDS) for the IRF200S234 is 200V.
The maximum continuous Drain Current (ID) for the IRF200S234 is 90A at a case temperature of 25°C.
The typical On-Resistance (RDS(on)) of the IRF200S234 is 14mΩ at VGS=10V and ID=51A.
The IRF200S234 MOSFET is supplied in a D2-PAK package.
The standard package quantity for the IRF200S234 is 800 units.
Yes, the IRF200S234 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRF200S234 is 1 Unlimited.