| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,650 pcs
|
1650 pcs | On Request | 1 | On Request | On Request | 1741+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
964 pcs
|
964 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free |
The Infineon IRF200P223 is a high-performance N-channel MOSFET designed for demanding applications. It features a maximum drain-source voltage (Vds) of 200V and a continuous drain current (ID) of 100A at 25°C case temperature.
With a typical on-resistance (Rds(on)) of 9.5mΩ at 10V gate-to-source voltage and 60A drain current, this MOSFET offers low conduction losses. The maximum Rds(on) is specified at 11.5mΩ under the same conditions.
This device is characterized by its improved gate, avalanche, and dynamic dv/dt ruggedness, along with fully characterized capacitance and Avalanche SOA. It also offers enhanced body diode dv/dt and di/dt capability.
The IRF200P223 is housed in a TO-247AC package, suitable for through-hole mounting. It operates within a junction temperature range of -55°C to +175°C. The component is Pb-Free and Halogen-Free compliant.
The maximum drain-source voltage (Vds) for the IRF200P223 is 200V.
The typical on-resistance (Rds(on)) for the IRF200P223 is 9.5mΩ when measured at a gate-source voltage of 10V and a drain current of 60A.
The continuous drain current (ID) for the IRF200P223 is 100A at a case temperature of 25°C and 71A at a case temperature of 100°C.
The IRF200P223 is supplied in a TO-247AC package.
The operating junction and storage temperature range for the IRF200P223 is -55°C to +175°C.
The IRF200P223 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRF200P223 is 1 Unlimited.
