| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
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| Power Dissipation | |
| SVHC Present | |
| Tape & Reel |
The Infineon IRF1503STRLPBF is a HEXFET Power MOSFET designed with advanced Stripe Planar processing for extremely low on-resistance per silicon area. This device offers a drain-to-source breakdown voltage of 30V and a continuous drain current of up to 75A at 25°C (package limited).
Key electrical characteristics include a maximum static drain-to-source on-resistance of 3.3mΩ at 10V gate-to-source voltage and 140A drain current. The gate threshold voltage ranges from 2.0V to 4.0V. It boasts fast switching speeds with turn-on delay time of 17ns and fall time of 48ns.
With a junction operating temperature range of -55°C to +175°C and a junction-to-case thermal resistance of 0.75°C/W, this MOSFET is suitable for demanding applications. It is housed in a TO-262 package, designed for through-hole mounting.
Typical applications include industrial motor drives. The advanced process technology and high performance make it an efficient and reliable component for various power management systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the IRF1503STRLPBF is 75A at 25°C (package limited).
The maximum static drain-to-source on-resistance is 3.3mΩ when VGS is 10V and ID is 140A.
The operating junction and storage temperature range is -55°C to +175°C.
The IRF1503STRLPBF is supplied in a TO-262 package.
The RoHS status is RoHS3 Compliant.