| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,362 pcs
|
3362 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF1503STRLPBF is a HEXFET Power MOSFET from Infineon Technologies, featuring an N-Channel enhancement mode design. It is rated for a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (ID) of 75A at Tc=25°C (package limited), with a silicon limited capability of 190A. The device offers an ultra-low maximum on-resistance (RDS(on)) of 3.3mΩ at Vgs=10V and Id=140A, with a typical value of 2.6mΩ.
This MOSFET is designed for high efficiency and fast switching, with a total gate charge (Qg) of 200 nC maximum and 130 nC typical at Vgs=10V. It features a 175°C maximum junction operating temperature and a power dissipation of 200W at Tc=25°C. The device is suitable for applications requiring high current handling and low conduction losses such as industrial motor drives and power management.
The IRF1503STRLPBF is supplied in a D2PAK (TO-263) surface mount package, which provides excellent thermal performance with a junction-to-case thermal resistance of 0.75°C/W. It is offered in tape and reel packaging for automated assembly. The device is RoHS compliant and has a moisture sensitivity level of 1 (unlimited).
30V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (D2PAK).
-55°C to 175°C (junction).
RoHS3 Compliant (unverified).
75A at Tc=25°C (package limited), 190A silicon limited.