| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,820 pcs
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9820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF1407STRLPBF is a N-Channel power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. It features a drain-to-source voltage (Vdss) of 75V and a continuous drain current of 100A at 25°C case temperature. The device has an ultra-low on-resistance of 7.8 mOhm (max) at 78A and 10V gate drive, minimizing conduction losses.
The MOSFET is housed in a surface-mount D2PAK (TO-263) package, suitable for high-current applications. It offers a maximum power dissipation of 200W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C. The device is lead-free and RoHS compliant (unverified) and supports fast switching with a typical gate charge of 250 nC.
This HEXFET series MOSFET is ideal for applications requiring high efficiency and reliability, such as power supplies, motor drives, and automotive systems. The D2PAK package enables effective heat dissipation through the PCB copper area.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.98 | $2.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 75V.
100A at 25°C case temperature, derated to 70A at 100°C.
Maximum on-resistance is 7.8 mOhm at 78A drain current and 10V gate drive.
The junction temperature range is -55°C to 175°C.
It is available in the D2PAK (TO-263-3) surface mount package.
The part is listed as RoHS3 compliant, but this status is not independently verified.