IRF1407S IRF1407S is an N-Channel power MOSFET from Infineon with 75V drain-source voltage and 100A continuous drain current. It features ultra-low on-resistance of 7.8 mOhm and is housed in a D2PAK surface-mount package.
Mfr Part #:

IRF1407S

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRF1407S is an N-Channel power MOSFET from Infineon with 75V drain-source voltage and 100A continuous drain current. It features ultra-low on-resistance of 7.8 mOhm and is housed in a D2PAK surface-mount package.
✓ Total Stock: 5,014 pcs
$ Price Range: $3.06

IRF1407S Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
14 pcs
14 pcs On Request 1 On Request On Request On Request On Request On Request

IRF1407S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF1407S Description

Short technical summary and product information.

The IRF1407S is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-current switching applications requiring low conduction losses.

 

Key electrical specifications include a drain-source voltage (Vdss) of 75V, continuous drain current of 100A at Tc=25°C, and a maximum drain-source on-resistance of 7.8 mOhm at Vgs=10V. The device can handle pulsed drain currents up to 520A and offers a single-pulse avalanche energy rating of 390 mJ. Gate threshold voltage ranges from 2.0V to 4.0V, and total gate charge is 250 nC at Vgs=10V.

 

The MOSFET is housed in a D2PAK (TO-263) surface-mount package, suitable for automated assembly. It supports an operating junction temperature range of -55°C to 175°C and has a maximum power dissipation of 200W at Tc=25°C. The part is lead-free (PbF) and RoHS compliant.

IRF1407S Quick Information

Product Type: Power MOSFET
Canonical Name: IRF1407S N-Channel Power MOSFET
Subcategory: Single MOSFET

IRF1407S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IRF1407S Estimated Pricing

Qty Low High
50+ $3.06 $3.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF1407S Features

  • Ultra-low on-resistance of 7.8 mOhm
  • Rated for 75V drain-source voltage
  • Continuous drain current up to 100A
  • 175°C maximum junction temperature
  • Lead-free and RoHS compliant

IRF1407S Applications

  • High-current DC-DC converter circuits
  • Motor drive and power management
  • Automotive and industrial power switching
  • Battery protection and load switching

IRF1407S FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRF1407S?

The maximum drain-source voltage (Vdss) is 75V.

What is the continuous drain current rating of the IRF1407S?

The continuous drain current is 100A at Tc=25°C and 70A at Tc=100°C.

What is the on-resistance of the IRF1407S?

The maximum drain-source on-resistance is 7.8 mOhm at Vgs=10V and Id=78A.

What package does the IRF1407S come in?

The IRF1407S is available in a D2PAK (TO-263) surface-mount package.

What is the operating temperature range of the IRF1407S?

The operating junction temperature range is -55°C to 175°C.

Is the IRF1407S RoHS compliant?

The IRF1407S is lead-free (PbF) and RoHS compliant.

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