| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
119 pcs
|
119 pcs | On Request | 1 | On Request | On Request | 07+01 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF1407LPBF is an N-Channel enhancement-mode MOSFET from Infineon Technologies. It features a drain-source voltage rating of 75V and a continuous drain current of 100A at case temperature. The device offers a low on-resistance of 7.8 mOhm maximum at 78A and 10V gate drive, making it suitable for high-efficiency power switching applications.
With a maximum gate charge of 250 nC and input capacitance of 5600 pF, the MOSFET is designed for moderate-speed switching. The gate threshold voltage is 4V maximum. The device is housed in a TO-262 package with long leads (I²Pak), suitable for through-hole mounting. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
75V.
100A at case temperature.
7.8 mOhm maximum at 78A and 10V gate drive.
TO-262 (I²Pak) with long leads, through-hole mounting.
Yes, RoHS3 compliant.
250 nC maximum at 10V gate voltage.
N-Channel.