| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF1405ZPBF is an N-Channel enhancement-mode power MOSFET manufactured by Infineon Technologies. It is part of the HEXFET product family and uses advanced process technology to achieve very low on-resistance per silicon area.
Key electrical specifications include a maximum drain-to-source voltage of 55V and a continuous drain current of 75A (package limited) or 150A (silicon limited) at 25°C case temperature. Pulsed drain current is rated up to 600A. Maximum on-resistance is 4.9mΩ at 75A drain current and 10V gate-source voltage. Total gate charge is 180nC maximum, and input capacitance is 4780pF at 25V drain-source voltage.
The device is designed for high-power switching applications and supports repetitive avalanche operation up to the maximum junction temperature. Maximum power dissipation is 230W at 25°C case temperature, and the operating junction temperature range is -55°C to 175°C.
The IRF1405ZPBF is available in a through-hole TO-220AB (TO-220-3) package. The datasheet confirms lead-free (PbF) construction. The low junction-to-case thermal resistance of 0.65°C/W supports efficient heat management in demanding power circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.33 | $4.33 |
| 50+ | $2.21 | $2.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 55V.
The continuous drain current is 75A at 25°C case temperature (package limited), with a silicon limit of 150A.
Maximum on-resistance is 4.9mΩ at 75A drain current and 10V gate-source voltage.
The junction operating temperature range is -55°C to 175°C.
It is available in a through-hole TO-220AB (TO-220-3) package.
The manufacturer datasheet indicates lead-free (PbF) construction. The product database lists it as RoHS3 compliant, but this status is not independently verified.
Maximum power dissipation is 230W at 25°C case temperature.