IRF1405ZL N-Channel MOSFET with 55V drain-source breakdown voltage and 75A continuous drain current. Features low on-resistance of 4.9mOhm maximum at 10V gate drive.
Mfr Part #:

IRF1405ZL

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 55V drain-source breakdown voltage and 75A continuous drain current. Features low on-resistance of 4.9mOhm maximum at 10V gate drive.
✓ Total Stock: 4,000 pcs
$ Price Range: $3.05

IRF1405ZL Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request

IRF1405ZL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF1405ZL Description

Short technical summary and product information.

The IRF1405ZL is an N-channel enhancement mode MOSFET designed for high-efficiency power switching applications. It features a drain-source breakdown voltage of 55 V minimum and a continuous drain current rating of 75 A at Tc = 25°C. The device achieves a maximum on-resistance of 4.9 mOhm at Vgs = 10 V, ensuring low conduction losses. Gate charge is 180 nC maximum at Vgs = 10 V, and input capacitance is 4780 pF at Vds = 25 V, contributing to fast switching performance.

 

The MOSFET is housed in a through-hole TO-262-3 long leads package (I²Pak, TO-262AA) with a supplier device package of TO-262. It supports a junction temperature range of -55°C to 175°C, making it suitable for demanding environments. Thermal resistance is 0.65°C/W junction-to-case and 62°C/W junction-to-ambient. The device is rated for a power dissipation of 230 W at Tc = 25°C.

 

Switching characteristics include typical turn-on delay of 18 ns, rise time of 110 ns, turn-off delay of 48 ns, and fall time of 82 ns. Internal drain inductance is 4.5 nH and source inductance is 7.5 nH. The IRF1405ZL is also characterized for repetitive avalanche energy up to 75 mJ per the datasheet.

IRF1405ZL Quick Information

Product Type: MOSFET
Series: HEXFET
Canonical Name: IRF1405ZL N-Channel MOSFET, 75 A, 55 V, TO-262
Subcategory: Single MOSFET

IRF1405ZL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

IRF1405ZL Estimated Pricing

Qty Low High
50+ $3.05 $3.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF1405ZL Features

  • Ultra-low on-resistance of 4.9 mOhm max.
  • 175°C maximum junction temperature rating.
  • Fast switching with 110 ns rise time.
  • Through-hole TO-262 package for easy mounting.
  • N-channel enhancement mode MOSFET.

IRF1405ZL Applications

  • Automotive applications due to 175°C rating.
  • High-efficiency power supplies and converters.
  • Motor control and drive circuits.
  • DC-DC converters and inverters.
  • Load switching and battery management.

IRF1405ZL FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IRF1405ZL?

55 V minimum.

What package is the IRF1405ZL available in?

TO-262-3 Long Leads, I²Pak, TO-262AA (through-hole).

What is the operating junction temperature range?

-55°C to 175°C.

Is the IRF1405ZL RoHS compliant?

RoHS3 compliant (unverified).

What is the continuous drain current rating?

75 A at Tc = 25°C.

What is the on-resistance of the IRF1405ZL?

4.9 mOhm maximum at Vgs = 10 V, Id = 75 A.

What is the gate threshold voltage?

2.0 V minimum, 4.0 V maximum at Id = 250 µA.

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