| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
680 pcs
|
680 pcs | On Request | 1 | On Request | On Request | 1122 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF1405STRLPBF is an N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET series. It features a maximum drain-source voltage of 55V and a continuous drain current of 131A at 25°C. The ultra-low on-resistance (5.3 mOhm max at 10V gate drive) minimizes conduction losses. The device is designed for fast switching with typical turn-on delay of 13 ns and rise time of 190 ns. It is avalanche rated with a single pulse avalanche energy of 590 mJ. The junction temperature range is -55°C to 175°C, and power dissipation is 200W at 25°C. The MOSFET is supplied in a D2PAK surface mount package (TO-263-3). Typical applications include industrial motor drives, power management, and DC-DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.90 | $2.90 |
| 10+ | $1.87 | $1.87 |
| 50+ | $1.43 | $1.43 |
| 100+ | $1.29 | $1.29 |
| 800+ | $0.98 | $0.98 |
| 2,400+ | $0.87 | $0.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55V.
D2PAK (TO-263-3, D²Pak).
-55°C to 175°C.
RoHS3 Compliant (unverified).
131A at 25°C, 93A at 100°C.
5.3 mOhm max at 10V gate drive with 101A drain current.
Total gate charge is 260 nC max, gate-source charge 66 nC max, gate-drain charge 93 nC max.